SPN8902 Description
The SPN8902 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8910 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
SPN8902 Key Features
- 100V/2A, RDS(ON)=330mΩ@VGS=10V
- 100V/1A, RDS(ON)=350mΩ@VGS=4.5V
- High density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current
- SOT-223 package design
SPN8902 Applications
- High Frequency Small Power Switching for