SPN9507 Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET 28DESCRIPTION The SPN9507 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . Features - 75V/60A,RDS(ON)=5.0mΩ@VGS=10V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - TO-220-3L package design APPLICATIONS - DC/DC Converter - Load Switch - SMPS Secondary Side Synchronous Rectifier PIN CONFIGURATION( TO-220-3L ) PART MARKING 2020/05/13 Ver.3 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN9507T220TGB TO-220-3L ※ SPN9507T220TGB: Tube ; Pb - Free; Halogen - Free Part Marking SPN9507 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise...