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SPN9507 - N-Channel MOSFET

General Description

The SPN9507 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 75V/60A,RDS(ON)=5.0mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L package design.

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Datasheet Details

Part number SPN9507
Manufacturer SYNC POWER
File Size 385.94 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN9507 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN9507 N-Channel Enhancement Mode MOSFET 28DESCRIPTION The SPN9507 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  75V/60A,RDS(ON)=5.0mΩ@VGS=10V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L package design APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier PIN CONFIGURATION( TO-220-3L ) PART MARKING 2020/05/13 Ver.