SPN9910 Overview
The SPN9910 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for most of synchronous buck converter applications.
SPN9910 Key Features
- 60V/60A, RDS(ON)=10mΩ@VGS=10V
- 60V/60A, RDS(ON)=12.0mΩ@VGS=4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- TO-252-2L/TO-251S-3L package design