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SPN9910 - N-Channel MOSFET

Description

The SPN9910 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 60V/60A, RDS(ON)=10mΩ@VGS=10V.
  • 60V/60A, RDS(ON)=12.0mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L/TO-251S-3L package design PIN.

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Datasheet Details

Part number SPN9910
Manufacturer SYNC POWER
File Size 369.27 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN9910 Datasheet
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SPN9910 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9910 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for most of synchronous buck converter applications. APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter FEATURES  60V/60A, RDS(ON)=10mΩ@VGS=10V  60V/60A, RDS(ON)=12.0mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L/TO-251S-3L package design PIN CONFIGURATION TO-252 TO-251 2020/04/20 Ver.
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