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SPP1013 - P-Channel MOSFET

General Description

The SPP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • P-Channel -20V/0.45A,RDS(ON)=0.52Ω@VGS=-4.5V -20V/0.35A,RDS(ON)=0.70Ω@VGS=-2.5V -20V/0.25A,RDS(ON)=0.95Ω@VGS=-1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-523 (SC-89) package design PIN.

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Datasheet Details

Part number SPP1013
Manufacturer SYNC POWER
File Size 340.08 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP1013 Datasheet

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Other Datasheets by SYNC POWER

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPP1013 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Drivers : Relays/Solenoids/Lamps/Hammers  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers FEATURES  P-Channel -20V/0.45A,RDS(ON)=0.52Ω@VGS=-4.5V -20V/0.35A,RDS(ON)=0.70Ω@VGS=-2.5V -20V/0.