SPP2337 Description
The SPP2337 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are...
SPP2337 Key Features
- 100V/-1.5A,RDS(ON)= 300mΩ@VGS=-10V
- 100V/-1.2A,RDS(ON)= 360mΩ@VGS=-4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23 package design
SPP2337 Applications
- Power Management in Note book