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SPP3407D - P-Channel MOSFET

Description

The SPP3407D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -30V/-4.0A,RDS(ON)=70mΩ@VGS=-10V.
  • -30V/-3.2A,RDS(ON)=95mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design PIN.

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Datasheet preview – SPP3407D

Datasheet Details

Part number SPP3407D
Manufacturer SYNC POWER
File Size 343.32 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP3407D Datasheet
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SPP3407D P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3407D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  -30V/-4.0A,RDS(ON)=70mΩ@VGS=-10V  -30V/-3.2A,RDS(ON)=95mΩ@VGS=-4.
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