Datasheet Details
| Part number | SPP3413W |
|---|---|
| Manufacturer | SYNC POWER |
| File Size | 340.10 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 SPP3413W Datasheet
|
|
|
General Description
The SPP3413W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Key Features
- -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V.
- -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V.
- -20V/-1.7A,RDS(ON)=145mΩ@VGS=-1.8V.
- Super high density cell design for extremely low RDS (ON).
- Exceptional on-resistance and maximum DC current capability.
- SOT-23 package design.