Datasheet Summary
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP3413W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
Features
- -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V
- -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V
- -20V/-1.7A,RDS(ON)=145mΩ@VGS=-1.8V
- Super high...