SPP4403 Datasheet | SYNC POWER

P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter Features - -20V/-10.0A,RDS(ON)= 20mΩ@VGS=-4.5V - -20V/-8.6 A,RDS(ON)= 25mΩ@VGS=-2.5V - -20V/-7.6 A,RDS(ON)= 35mΩ@VGS=-1.8V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOP-8P package design PIN CONFIGURATION(SOP- 8) PART MARKING 2020/03/05 Ver.3 Page 1 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPP4403S8RGB...