SPP4953 Datasheet | SYNC POWER

P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4953 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . Features ‹ -30V/-5.0A,RDS(ON)= 60mΩ@VGS=- 10V ‹ -30V/-4.5A,RDS(ON)= 80mΩ@VGS=- 6V ‹ -30V/-3.7A,RDS(ON)= 90mΩ@VGS=-4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOP - 8P package design APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter PIN CONFIGURATION(SOP - 8P) .. PART MARKING 2006/10/16 Ver.1 Page 1 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 ORDERING INFORMATION Part Number SPP4953S8RG SPP4953S8TG ※ SPP4953S8RG : 13” Tape Reel ; Pb - Free ※ SPP4953S8TG : Tube ; Pb - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter .. Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 Package SOP- 8P SOP- 8P Part Marking SPP4953 SPP4953 Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS TA=25℃ TA=70℃ PD TJ TSTG RθJA Typical -30 ±20 Unit Drain-Source Voltage Gate - Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient V V A A A W ℃ ℃ ℃/W -6.2 -4.0 -30 -2.3 2.8 1.8 -55/150 -55/150...