SPP6507 Datasheet | SYNC POWER

Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6507 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter Features - P-Channel -30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V -30V/-2.5A,RDS(ON)=115mΩ@VGS=-4.5V -30V/-1.5A,RDS(ON)=150mΩ@VGS=-2.5V -30V/-1.0A,RDS(ON)=215mΩ@VGS=-1.8V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-23-6L package design PIN CONFIGURATION( SOT-23-6L ) PART MARKING 2020/02/19 Ver.3 Page 1 Dual P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 ORDERING INFORMATION Part Number Package SPP6507S26RGB SOT-23-6L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52...