SPP8625 Description
The SPP8625 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching.
SPP8625 Key Features
- 12V/-9.0A,RDS(ON)=19.5mΩ@VGS=-4.5V
- 12V/-8.5A,RDS(ON)=25mΩ@VGS=-2.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum
- PPAK3x3-8L package design
SPP8625 Applications
- Power Management in Note book