SPP8635 Description
The SPP8635 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching.
SPP8635 Key Features
- 30V/-10A,RDS(ON)=24mΩ@VGS=-10V
- 30V/-8.0A,RDS(ON)=30mΩ@VGS=-4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- PPAK3x3-8L package design
SPP8635 Applications
- Power Management in Note book