Datasheet4U Logo Datasheet4U.com

SPP9437 - P-Channel MOSFET

General Description

The SPP9437 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 。 -30V/-5.7A,RDS(ON)=45mΩ@VGS=-10V 。 -30V/-5.0A,RDS(ON)=50mΩ@VGS=-4.5V 。 -30V/-4.4A,RDS(ON)=65mΩ@VGS=-2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design PIN.

📥 Download Datasheet

Datasheet Details

Part number SPP9437
Manufacturer SYNC POWER
File Size 549.72 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP9437 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPP-250-LLPL Coaxial Cables TMC
SPP-375-LLPL Coaxial Cables TMC
SPP-500-LLPL Coaxial Cables TMC
SPP-ID975 (SPP-ID975 / SPP-ID976) Service Manual Sony
SPP-ID975 Cordless Telephone Sony

Other Datasheets by SYNC POWER

Part Number Description
SPP9433W P-Channel MOSFET
SPP9434 P-Channel MOSFET
SPP9435 P-Channel MOSFET
SPP9435A P-Channel MOSFET
SPP9435B P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SPP9437 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9437 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter FEATURES 。 -30V/-5.7A,RDS(ON)=45mΩ@VGS=-10V 。 -30V/-5.0A,RDS(ON)=50mΩ@VGS=-4.5V 。 -30V/-4.4A,RDS(ON)=65mΩ@VGS=-2.