SPP1305 Overview
The SPP1305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and...
SPP1305 Key Features
- 20V/-0.95A,RDS(ON)=280mΩ@VGS=-4.5V
- 20V/-0.80A,RDS(ON)=380mΩ@VGS=-2.5V
- 20V/-0.70A,RDS(ON)=530mΩ@VGS=-1.8V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-323 ( SC-70 ) package design
SPP1305 Applications
- Power Management in Note book