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SPP2095 - P-Channel MOSFET

General Description

The SPP2095 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -20V/-6.0A,RDS(ON)=65mΩ@VGS=-4.5V.
  • -20V/-3.6A,RDS(ON)=85mΩ@VGS=-2.5V.
  • -20V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L package design PIN.

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Datasheet Details

Part number SPP2095
Manufacturer SYNC Power
File Size 335.11 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP2095 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPP2095 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2095 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management. The package is universally preferred for commercial industrial surface mount applications APPLICATIONS  Power Management in Desktop Computer  DC/DC Converter  LCD Display inverter FEATURES  -20V/-6.0A,RDS(ON)=65mΩ@VGS=-4.5V  -20V/-3.6A,RDS(ON)=85mΩ@VGS=-2.5V  -20V/-2.0A,RDS(ON)=105mΩ@VGS=-1.