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SDF07N50T
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 2.1
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
500V 7A 1.2 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220F Package.
D
GDS
SDF SERIES TO-220F
G S
ORDERING INFORMATION
Ordering Code
Package
SDF07N50PT
TO-220F
Marking Code 07N50T
Delivery Mode Tube
RoHS Status Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C TC=100°C
IDM -Pulsed a
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C TC=100°C
TJ, TSTG
Operating Junction and Storage Temperature Range
Limit 500 ±30 7.0 4.