The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SDK03N04Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.3
PRODUCT SUMMARY
VDSS
ID RDS(ON) (Ω) Typ
400V
1.5A
3.5 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-89 Package.
D D
SOT-89
S D G
G S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TA=25°C TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit 400 ±30 1.5 1.2
6 10.4 1.25 0.
SDK03N04 Datasheet
