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SP2700 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 PDFN 5x6 PIN1 S1 G1 S2 G2.

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Datasheet Details

Part number SP2700
Manufacturer SamHop Microelectronics
File Size 107.72 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SP2700 Datasheet

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Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP2700 Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 210 @ VGS=10V 75V 2.5A 250 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 PDFN 5x6 PIN1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TA=25°C TA=70°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 75 ±20 2.5 2.0 10 16 2.5 1.