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SP2702 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. PDFN 5x6 PIN1 D2 5 D2 6 D1 7 D1 8 4 G2 3 S2 2 G1 1 S1.

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Datasheet Details

Part number SP2702
Manufacturer SamHop Microelectronics
File Size 105.71 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SP2702 Datasheet

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Full PDF Text Transcription (Reference)

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Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP2702 Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 513 @ VGS=10V 75V 1.6A 614 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. PDFN 5x6 PIN1 D2 5 D2 6 D1 7 D1 8 4 G2 3 S2 2 G1 1 S1 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TA=25°C TA=70°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 75 ±20 1.