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SP8009EL - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3.

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Datasheet Details

Part number SP8009EL
Manufacturer SamHop Microelectronics
File Size 101.86 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SP8009EL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product SP8009EL Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 33V ID 24A R DS(ON) (m Ω) Typ 5.0 @ VGS=10V 6.5 @ VGS=6V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range c Limit 33 ±20 Units V V A A mJ W °C TA=25°C 24 72 121 TA=25°C 1.