Datasheet4U Logo Datasheet4U.com

SP8009E - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3.

📥 Download Datasheet

Datasheet Details

Part number SP8009E
Manufacturer SamHop Microelectronics
File Size 110.57 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SP8009E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SP80001 800MHz Low-loss SAW Filter 53MHz Bandwidth SIPAT
SP8008-08UTG TVS Diode Arrays Littelfuse
SP800L Low Power Microprocessor Supervisory with Battery Switch-Over Sipex
SP800M Low Power Microprocessor Supervisory with Battery Switch-Over Sipex
SP8024 200V/us Integrated APC Amplifier with Gain Adjust & Differential Output Sipex

Other Datasheets by SamHop Microelectronics

Part Number Description
SP8009EL N-Channel Enhancement Mode Field Effect Transistor
SP8009 N-Channel Enhancement Mode Field Effect Transistor
SP8005 N-Channel Enhancement Mode Field Effect Transistor
SP8006 N-Channel Enhancement Mode Field Effect Transistor
SP8007 N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Green Product SP8009E Ver 1.5 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 33V ID 24A R DS(ON) (m Ω) Typ 5.0 @ VGS=10V 6.5 @ VGS=6V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Limit 33 ±20 Units V V A A W °C TA=25°C TA=25°C 24 72 1.