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SP8006 - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3.

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Datasheet Details

Part number SP8006
Manufacturer SamHop Microelectronics
File Size 110.59 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SP8006 Datasheet

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Other Datasheets by SamHop Microelectronics

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SP8005 N-Channel Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product SP8006 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 4.5 @ VGS=4.5V 4.7 @ VGS=4.0V 24V 12.5A 4.9 @ VGS=3.7V 5.5 @ VGS=3.1V 6.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 24 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 12.5 10 81 a Units V V A A A W W °C Maximum Power Dissipation 1.67 1.