SamHop Microelectronics SP8009
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | SP8009 |
|---|---|
| Datasheet | SP8009 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. P in 1 TSON 3.3 x 3.3ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Limit 30 ±20 Units V V A A W °C TA=25°C TA=25°C 24 72 1.67 -55 to 150 Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 75 °C/W Details are subject to change without notice. Jul,18,2013 1 SP8009 Ver 1.1ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min 30 10 10 ±100 Typ Max Units OFF CHARACTERISTICS BVDSS BVDSX IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=10mA VGS=-20V , ID=10mA VDS=30V , VGS=0V V V uA nA VGS= ±16V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain...
