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Green Product
SP8009
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
30V
ID
24A
R DS(ON) (m Ω) Typ
6.0 @ VGS=10V 7.2 @ VGS=6V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
P in 1
TSON 3.3 x 3.3
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a
Limit 30 ±20
Units V V A A W °C
TA=25°C TA=25°C
24 72 1.67 -55 to 150
Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
75
°C/W
Details are subject to change without notice.
SP8009 Datasheet
