The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Green Product
SP8601
Ver 2.5
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
17.5 @ VGS=4.5V 18.5 @ VGS=4.0V 20V 7.2A 20.0 @ VGS=3.7V 24.5 @ VGS=3.1V 27.0 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D1
D1
D2
D2
S mini 8
P IN 1
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a c c
TA=25°C TA=70°C TA=25°C TA=70°C
Limit 20 ±12 7.2 5.8 43 1.47 0.
SP8601 Datasheet
