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Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP8608
Ver 2.8
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
9.5 @ VGS=4.5V
9.8 @ VGS=4.0V
20V
12A
10.5 @ VGS=3.8V
12.5 @ VGS=3.1V
15.0 @ VGS=2.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D1 D1 D2 D2
S mini 8
PIN 1
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol VDS VGS
ID
IDM
PD
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous c
-Pulsed a c
Maximum Power Dissipation
TA=25°C TA=70°C
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit 20 ±12 12 9.
SP8608 Datasheet
