STA6610 Overview
S T A6610 S amHop Microelectronics C orp. Nov.24 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S S uper high dense cell design for low R DS (ON ). ID 7.6A R DS (ON) ( m Ω ) Max 23 @ V G S = 10V 35 @ V G S = 4.5V R ugged and reliable.