Click to expand full text
STA6611
SamHop Microelectronics Corp.
Nov. 22, 2006
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
PRODUCT SUMMARY
VDSS
30V
(N-Channel)
Max
PRODUCT SUMMARY
VDSS
-30V
(P-Channel)
Max
ID
7.6A
RDS(ON) ( m Ω )
ID
-6.6A
RDS(ON) ( m Ω )
23 @ VGS = 10V 30 @ VGS = 4.5V
35 @ VGS = -10V 55 @ VGS = -4.5V
D1
8
D1
7
D2
6
D2
5
P DIP -8 1
1 2 3 4
S1
G1 S 2
G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
b a
S ymbol V DS V GS 25 C 70 C IDM IS PD Ta=70 C T J , T S TG ID
N-Channel P-Channel 30 20 7.6 6 30 1.7 3 2 -55 to 150 -30 20 - 6.6 5.3 28 -1.
STA6611 Datasheet
