STD330S - N-Channel Logic Level Enhancement Mode Field Effect Transistor
Features
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID
20A
R DS(ON) (m Ω) Max
28 @ VGS=10V 38 @ VGS=4.5V
G S
G D
S
STU SERIES TO - 252AA( D - PAK )
STD SERIES TO - 251 ( I - PAK ).
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Full PDF Text Transcription
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STU/D330S
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
30V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
ID
20A
R DS(ON) (m Ω) Max
28 @ VGS=10V 38 @ VGS=4.5V
G S
G D
S
STU SERIES TO - 252AA( D - PAK )
STD SERIES TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 30 ±20 TC=25°C TC=70°C 20 16.3 80 8.8 TC=25°C TC=70°C 21 13.
STD330S Datasheet
