Datasheet4U Logo Datasheet4U.com

STD417S - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ).

📥 Download Datasheet

Datasheet Details

Part number STD417S
Manufacturer SamHop Microelectronics
File Size 121.77 KB
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet STD417S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STD40N2LH5 N-channel Power MOSFET STMicroelectronics
STD40NE03L N-CHANNEL POWER MOSFET STMicroelectronics
STD40NF02L N-CHANNEL STripFET POWER MOSFET ST Microelectronics
STD40NF03L N-CHANNEL STripFET POWER MOSFET ST Microelectronics
STD40NF06 N-CHANNEL POWER MOSFET ST Microelectronics

Other Datasheets by SamHop Microelectronics

Part Number Description
STD417L P-Channel Enhancement Mode Field Effect Transistor
STD410S N-Channel Logic Level Enhancement Mode Field Effect Transistor
STD412S N-Channel Logic Level Enhancement Mode Field Effect Transistor
STD413S P-Channel Logic Level Enhancement Mode Field Effect Transistor
STD419S P-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Green Product STU/D417S Ver 1.2 S a mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -40V ID -43A R DS(ON) (m Ω) Typ 14 @ VGS=-10V 23 @ VGS=-4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a Limit -40 ±20 -43 -34.