SamHop Microelectronics STF8211
Dual N-Channel Enhancement Mode Field Effect Transistor
| Part No. | STF8211 |
|---|---|
| Datasheet | STF8211 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | Dual N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact (D1/D2) S2 G1 3 S1 2 T DF N 2X 3 4 G2 5 6 S2 S2 D1/D2 S1 1 (Bottom view)ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed ac c Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 8 6.4 48 1.56 1.00 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 80 °C/W Details are subject to change without notice. Jul,18,2014 1 STF8211 Ver 1.5ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=16V , VGS=0V Min 20 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leaka...
