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STM4615 - P-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID -12.5A R DS(ON) (m Ω) Max 10.5 @ VGS=-10V 16 @ VGS=-4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D.

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Datasheet Details

Part number STM4615
Manufacturer SamHop Microelectronics
File Size 170.69 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STM4615 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product STM4615 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -40V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID -12.5A R DS(ON) (m Ω) Max 10.5 @ VGS=-10V 16 @ VGS=-4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit -40 ±20 TA=25°C TA=70°C -12.5 -10 -70.5 46 TA=25°C TA=70°C 2.5 1.