Datasheet4U Logo Datasheet4U.com

STP820S - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 D G S.

📥 Download Datasheet

Datasheet Details

Part number STP820S
Manufacturer SamHop Microelectronics
File Size 134.23 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STP820S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STP80L60 N-Channel Logic Level Enhancement Mode Field Effect Transistor SamHop
STP80N03L-06 N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR ST Microelectronics
STP80N05-09 N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR ST Microelectronics
STP80N06-10 N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR ST Microelectronics
STP80N10F7 N-Channel Power MOSFET STMicroelectronics

Other Datasheets by SamHop Microelectronics

Part Number Description
STP8444 N-Channel MOSFET
STP06N20 N-Channel MOSFET
STP10N03 N-Channel Enhancement Mode Field Effect Transistor
STP432S N-Channel Logic Enhancement Mode Field Effect Transistor
STP434S N-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB820S Sa mHop Microelectronics C orp. STP820SGreen Product Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 15 @ VGS=10V 75V 54A 18 @ VGS=4.5V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.