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STS2302A - N-Channel MOSFET

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D S OT 23-3L D S G G S.

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Datasheet Details

Part number STS2302A
Manufacturer SamHop Microelectronics
File Size 99.98 KB
Description N-Channel MOSFET
Datasheet download datasheet STS2302A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product STS2302A Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 20V ID 4A R DS(ON) (m Ω) Max 44 @ VGS= 4.5V 65 @ VGS= 2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D S OT 23-3L D S G G S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a TC=25°C TC=70°C TC=25°C TC=70°C Limit 20 ±10 4 3.2 15.3 1.25 0.