STS2300S Datasheet PDF

S T S 2300S S amHop Microelectronics C orp. S ep. 8 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 6A R DS (ON) S uper high dense cell design for low R DS (ON). R ugged and reliable. S OT-23 package. 35 @ V G S = 4.5V 45 @ V G S = 2.5V D S OT-23 D S G G S AB S OL UTE MAXIMUM R ATING (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation a S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 12 6 20 1.25 1.25 -55 to 150 Unit V V A A A W C Operating Junction and S torage Temperature R ange THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R thJA 100 C /W 1 S T S 2300S E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body L...