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STS2305A - P-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID -3.3A R DS(ON) (m Ω) Max 70 @ VGS=-4.5V 100 @ VGS=-2.5V S OT 23-3L D S G G D S.

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Datasheet Details

Part number STS2305A
Manufacturer SamHop Microelectronics
File Size 169.27 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STS2305A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product STS2305A Ver 1.1 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -20V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID -3.3A R DS(ON) (m Ω) Max 70 @ VGS=-4.5V 100 @ VGS=-2.5V S OT 23-3L D S G G D S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a TC=25°C TC=70°C TC=25°C TC=70°C Limit -20 ±10 -3.3 -2.6 -12.5 1.25 0.