STS2305 Datasheet PDF

FEATURES

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D S OT -23 D S G S G

ABSOLUTE MAXIMUM RATINGS

( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit -20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C -3.4 -2.7 -13 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. Jan,07,2013 1 STS2305 Ver 1.0

ELECTRICAL CHARACTERISTICS

( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS=0V , ID=-250uA VDS=-16V , VGS=0V -20 1 ±100 V uA nA VGS= ±12V , VDS=0V RDS(ON) Drain-Source On-State Resistance VDS=VGS , ID=-1mA VGS=-4.5V , ID=-1.7A VGS=-4.0V , ID=-1.7A VGS=-3.7V , ID=-1.7A VGS=-3.1V , ID=-1.7A VGS=-2.