STS2306A Datasheet PDF

Green Product S T S 2306A Apr. 27 2010 V er1.1 S amHop Microelectronics C orp. N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m Ω ) Max ID 4.5A R DS (ON) S uper high dense cell design for low R DS (ON ). 40 @ V G S = 4.5V 50 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. D SO T-2 3 -3 L D S G G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 10 4.5 17 1.25 1.25 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 R JA 100 C /W S T S 2306A E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Bre...