STS2306A Datasheet | SamHop Microelectronics

Green Product S T S 2306A Apr. 27 2010 V er1.1 S amHop Microelectronics C orp. N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m Ω ) Max 4.5A R DS (ON) S uper high dense cell design for low R DS (ON ). 40 @ V G S = 4.5V 50 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. SO T-2 3 -3 L ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS...