• Part: STS2306
  • Description: N-Channel Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: SamHop Microelectronics
  • Size: 617.36 KB
Download STS2306 Datasheet PDF
SamHop Microelectronics
STS2306
STS2306 is N-Channel Enhancement Mode Field Effect Transistor manufactured by SamHop Microelectronics.
S amHop Microelectronics C orp. S T S 2306 Apr,21 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m £[ ) Max 2.8A R DS (ON) S uper high dense cell design for low R DS (ON ). 45 @ V G S = 4.5V 60 @ V G S =2.5V R ugged and reliable. S OT-23 package. S OT-23 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 8 2.8 12...