STS2306 datasheet by SamHop Microelectronics.
| Part number | STS2306 |
|---|---|
| Datasheet | STS2306-SamHopMicroelectronics.pdf |
| File Size | 617.36 KB |
| Manufacturer | SamHop Microelectronics |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
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S amHop Microelectronics C orp. S T S 2306 Apr,21 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m £[ ) Max ID 2.8A R DS (ON) S uper high dense cell design for low R DS (ON ). 45 @ V G S = 4.5V 60 @ V G S =2.5V R ugged and reliable.
View all SamHop Microelectronics datasheets
| Part Number | Description |
|---|---|
| STS2306A | N-Channel MOSFET |
| STS2306E | N-Channel MOSFET |
| STS2300 | N-Channel Enhancement Mode Field Effect Transistor |
| STS2300S | N-Channel Enhancement Mode Field Effect Transistor |
| STS2301 | P-Channel Enhancement Mode Field Effect Transistor |
| STS2301A | P-Channel Enhancement Mode Field Effect Transistor |
| STS2302A | N-Channel MOSFET |
| STS2302S | N-Channel Enhancement Mode Field Effect Transistor |
| STS2305 | P-Channel Enhancement Mode Field Effect Transistor |
| STS2305A | P-Channel Enhancement Mode Field Effect Transistor |
