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S amHop Microelectronics C orp.
S T S 2306
Apr,21 2005 ver1.2
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m £[ ) Max
ID
2.8A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
45 @ V G S = 4.5V 60 @ V G S =2.5V
R ugged and reliable. S OT-23 package.
D
S OT-23
D S G
G
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 8 2.8 12 1.25 1.
STS2306 Datasheet
