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Green Product
STS3116E
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
94 @ VGS=10V 30V 2.6A 107 @ VGS=4.5V 139 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D
S OT 23
D S G S G
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
TA=25°C TA=70°C TA=25°C TA=70°C
Limit 30 ±12 2.6 2.1 9 1.25 0.
STS3116E Datasheet
