STS8201 - Dual N-Channel E nhancement Mode Field Effect Transistor

SamHop Microelectronics

Datasheet Details

Part number	STS8201
Manufacturer	SamHop Microelectronics
File Size	586.77 KB
Description	Dual N-Channel E nhancement Mode Field Effect Transistor
Datasheet	STS8201 Datasheet

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www.DataSheet4U.com S T S 8201 S amHop Microelectronics C orp. J an. 03 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 5A R DS (ON) S uper high dense cell design for low R DS (ON ). 27 @ V G S = 4.0V 40 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. D1 D2 S OT26 Top View S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C -P ulsed b S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 12 5 20 1.25 1.