STS8205 - Dual N-Channel E nhancement Mode Field Effect Transistor

SamHop Microelectronics

Datasheet Details

Part number	STS8205
Manufacturer	SamHop Microelectronics
File Size	602.38 KB
Description	Dual N-Channel E nhancement Mode Field Effect Transistor
Datasheet	STS8205 Datasheet

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www.DataSheet4U.com S T S 8205 S amHop Microelectronics C orp. J un,08 2005 ver 1.4 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 4A R DS (ON) S uper high dense cell design for low R DS (ON ). 30 @ V G S = 4.0V 46 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. D1 D2 TS OP 6 Top View S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 S1 G2 S2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C -P ulsed b S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 10 4 25 2 1.