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Gre r Pro
STT3414
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
33 @ VGS=10V 30V 7A 42 @ VGS=4.5V 57 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package.
D
D
G
G D S S
STT SERIES SOT-223
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 30 ±12 TA=25°C TA=70°C 7 5.6 28 9 TA=25°C TA=70°C 3 1.
STT3414 Datasheet
