The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
STT3416Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS 30V
ID 7.5A
RDS(ON) (mΩ) Max
29 @ VGS=10V 42 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount Package.
G
S
STT SERIES SOT - 223
D G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TA=25°C TA=70°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit 30 ±20 7.5 6.0 50 12 3 1.
STT3416 Datasheet
