SamHop Microelectronics STT3416
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount Package. G S STT SERIES SOT - 223 D G SABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TA=25°C TA=70°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 30 ±20 7.5 6.0 50 12 3 1.9 -55 to 150 42 Units V V A A A mJ W W °C °C/W Details are subject to change without notice. 1 Dec,07,2016 STT3416 Ver 1.0ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted)