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S amHop Microelectronics C orp.
P -C hannel E nhancement Mode Field E ffect Transistor Sh
t e e
4U
m o .c
S T U/D1255P L
Arp,20 2005 ver1.1
a t a P R ODUC T S UMMAR Y D . R V w w I w
DS S D
F E AT UR E S
DS (ON) ( m W ) Max
S uper high dense cell design for low R DS (ON ).
110 @ V G S = -10V 145 @ V G S = -4.5V
R ugged and reliable.
-55V
-12A
TO-252 and TO-251 P ackage.
D G S
G D
S
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
AB S OL UTE MAXIMUM R ATINGS
P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage
Drain C urrent-C ontinuous @ Ta
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C
w
w
-P ulsed
w
.
STU1225PL Datasheet
