SamHop Microelectronics STU1855PLS
P-Channel E nhancement Mode Field Effect Transistor
| Part No. | STU1855PLS |
|---|---|
| Datasheet | STU1855PLS Download |
| Manufacturer |  SamHop Microelectronics |
| Description | P-Channel E nhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
(TA 25 C unless = otherwise noted) Parameter OFF CHARACTERISTICS 5 Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS b Symbol Condition VGS 0V, ID -250uA VDS -44V, VGS 0V VGS 20V, VDS 0V VDS VGS, ID = -250uA VGS -10V, ID -10A VGS -4.5V, ID -6A VDS = -5V, VGS = -10V VDS -15V, ID -10A Min Typ C Max Unit -55 -1 100 -1.3 -1.6 62 80 V uA nA V m-ohm m-ohm ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) ID(ON) gFS c -2.5 73 90 Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 20 12 925 86 61 3.3 17.6 28 87.2 27.2 18.8 9.2 1.6 4.7 A S PF PF PF DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance CISS COSS CRSS Rg c VDS =-30V, VGS = 0V f =1.0MHZ VDS =0V, VGS=0A , f=1MHZ VD = -30V, ID = -1A, VGEN = - 10V, RGEN = 6 ohm VDS =-30V,ID =-5A,VGS =-10V VDS =-30V,ID =-5A,VGS =-4.5V VDS =-30V, ID = -5A, VGS =-10V 2 ohm SWITCHING CHARACTERI...
