SamHop Microelectronics STU3055L2-60
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | STU3055L2-60 |
|---|---|
| Datasheet | STU3055L2-60 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
( m £[ ) Max ID 14A RDS(ON) Super high dense cell design for low RDS(ON). 65 @ VGS = 4.5V 90 @ VGS = 2.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) SABSOLUTE MAXIMUM RATINGS
(TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage a Drain Current-Continuous @T J=125 C b -Pulsed (300ms Pulse Width) Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 12 14 23 10 50 -55 to 150 Unit V V A A A W C Drain-Source Diode Forward Current Maximum Power Dissipation a a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W STU/D3055L2-60ELECTRICAL CHARACTERISTICS
(TA 25 C unless = otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS b Symbol Condition VGS 0V, ID 250uA VDS 16V, VGS 0V V...
