SamHop Microelectronics STU30N10
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | STU30N10 |
|---|---|
| Datasheet | STU30N10 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO-252AA(D-PAK) G DS STD SERIES TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=70°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Limit 100 ±20 30 24 88 144 52 33 -55 to 150 2.4 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 Apr,22,2015
