Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S
G D
S
STU SERIES TO-252AA (D-PAK)
STD SERIES TO-251 (I-PAK).
STU302S- N-Channel Logic Level E nhancement Mode Field Effect Transistor
STU3030NL- N-Channel Logic Level E nhancement Mode Field Effect Transistor
STU3030NLS- N-Channel Logic Level E nhancement Mode Field Effect Transistor
STU303S- P-Channel Enhancement Mode Field Effect Transistor
STU3055L- N-Channel Logic Level E nhancement Mode F ield E ffect Transistor
STU3055L2- N-Channel Logic Level Enhancement Mode Field Effect Transistor
Full PDF Text Transcription
Click to expand full text
Green Product
STU/D30N15
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
150V
ID
22A
R DS(ON) (m Ω) Typ
62 @ VGS=10V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package.
G S
G D
S
STU SERIES TO-252AA (D-PAK)
STD SERIES TO-251 (I-PAK)
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a
Limit 150 ±20 TC=25°C TC=70°C TC=25°C TC=70°C 22 18.4 64 75 52.