SamHop Microelectronics STU30N15
N-Channel MOSFET
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO-252AA (D-PAK) STD SERIES TO-251 (I-PAK)ABSOLUTE MAXIMUM RATINGS
( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Limit 150 ±20 TC=25°C TC=70°C TC=25°C TC=70°C 22 18.4 64 75 52.5 -55 to 175 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 50 °C/W °C/W Details are subject to change without notice. May,30,2014 1 STU/D30N15 Ver 1.1ELECTRICAL CHARACTERISTICS
( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=120V , VGS=0V...