SamHop SC8605
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW BOTTOM VIEW 1.57 㫧㩷0.03 4x 0.25 㫧 0.03 3.54 㫧㩷0.03 8605 Date Code 1.25 㫧 0.03 43 52 61 Mark area 1-pin index mark S1 3 2x φ 0.25 㫧 0.03 2 1 0.16 㫧㩷0.01 4 5 6 0.25 0.5ABSOLUTE MAXIMUM RATINGS
(TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 20 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±8 18 100 PT Total Power Dissipation a 2.5 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 Units V V A A W °C Details are subject to change without notice. 1 1.00 1.00 LAND PATTERN (REFERENCE) PACKAGE OUTLINE 0.50 PITCH 4X 1.25 2.00 PITCH 2X 0.25 8X R0.125 PIN 2 Unit : mm PIN 5 Rg Rg Rg=200 PIN 1,3 PIN 4,6 PIN 1 : Source 1 PIN 2 : Gate 1 PIN 3 : Source 1 PIN 4 : Source 2 PIN 5: Gate 2 PIN 6 : Source 2 Jul,07,2015 SC8605 PreliminaryELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ...