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SC8605S - Dual N-Channel Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW BOTTOM VIEW 1.57 0.03 4x 0.25 0.03 3.54 0.03 8605S Date Code 1.25 0.03 43 52 61 Mark area 1-pin index mark S1 3 2x φ 0.25 0.03 2 1 0.13 0.01 4 5 6 0.25 0.5.

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Datasheet Details

Part number SC8605S
Manufacturer SamHop
File Size 114.65 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SC8605S Datasheet
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Full PDF Text Transcription

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SC8605SGreen Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Typ 4.2 @ VGS=4.5V 4.3 @ VGS=4.0V 20V 18A 4.4 @ VGS=3.8V 4.9 @ VGS=3.1V 5.6 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW BOTTOM VIEW 1.57 0.03 4x 0.25 0.03 3.54 0.03 8605S Date Code 1.25 0.03 43 52 61 Mark area 1-pin index mark S1 3 2x φ 0.25 0.03 2 1 0.13 0.01 4 5 6 0.25 0.5 ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 20 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±8 18 100 PT Total Power Dissipation a 2.
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