SamHop SC8605S
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW BOTTOM VIEW 1.57 㫧㩷0.03 4x 0.25 㫧 0.03 3.54 㫧㩷0.03 8605S Date Code 1.25 㫧 0.03 43 52 61 Mark area 1-pin index mark S1 3 2x φ 0.25 㫧 0.03 2 1 0.13 㫧㩷0.01 4 5 6 0.25 0.5ABSOLUTE MAXIMUM RATINGS
(TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 20 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±8 18 100 PT Total Power Dissipation a 2.5 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 Units V V A A W °C Details are subject to change without notice. 1 1.00 1.00 LAND PATTERN (REFERENCE) PACKAGE OUTLINE 0.50 PITCH 4X 1